Film patterning method, array substrate, and manufacturing method thereof

ABSTRACT

A film patterning method, an array substrate, and a manufacturing method of an array substrate are disclosed. The film patterning method includes: applying photoresist on a film to be patterned; performing exposure and development on the photoresist, a region corresponding to a completely removed portion of the photoresist after the exposure and the development being a first region; post-baking the photoresist, so that the photoresist is melted and collapsed to change the region corresponding to the completely removed portion into a second region, the photoresist after post-baking forms into a mask pattern; and patterning the film by using the mask pattern as a mask.

The present application claims priority of China Patent application No.201710585224.7 filed on Jul. 18, 2017, the content of which isincorporated in its entirety as portion of the present application byreference herein.

TECHNICAL FIELD

At least one embodiment of the present disclosure relates to a filmpatterning method, an array substrate, and a manufacturing methodthereof.

BACKGROUND

In a manufacturing method of an array substrate, a process forpatterning a film generally patterns the film by using photoresist as amask. Therefore, the precision of the manufactured photoresist mask hasa large impact on a pattern with small size to be formed on the film.

SUMMARY

At least one embodiment of the present disclosure provides a filmpatterning method, an array substrate and a manufacturing methodthereof.

At least one embodiment of the present disclosure provides a filmpatterning method, including: applying photoresist on a film to bepatterned; performing exposure and development on the photoresist, aregion corresponding to a completely removed portion of the photoresistafter the exposure and the development being a first region; post-bakingthe photoresist, so that the photoresist is melted and collapsed at ahigh temperature to change the region corresponding to the completelyremoved portion into a second region, the photoresist after post-bakingforms into a mask pattern; and patterning the film by using the maskpattern as a mask.

For example, in some examples, a minimum size of the first region in adirection parallel to a plane where the film is located is a first size,a minimum size of the second region in the direction parallel to theplane where the film is located is a second size, and the second size issmaller than the first size.

For example, in some examples, the photoresist is positive photoresist.

For example, in some examples, a planar shape of the second regionincludes at least one selected from the group consisting of a circle anda line.

For example, in some examples, during the post-baking, the post-bakinghas a temperature of 150° C.-300° C. to cause the photoresist to meltand collapse at a high temperature.

For example, in some examples, during the post-baking, a time for thepost-baking is 10 s-500 s.

For example, in some examples, during the post-baking, the time for thepost-baking is 10 s-50 s.

For example, in some examples, the second size is 1 μm-2.9 μm.

For example, in some examples, the first size is not less than 3 μm.

For example, in some examples, the photoresist has a thickness of 0.5μm-10 μm in a direction perpendicular to the film.

For example, in some examples, the thickness of the photoresist is 1.5μm-2.2 μm in the direction perpendicular to the film.

For example, in some examples, a light intensity used in the exposure is10 J/cm³-500 J/cm³.

At least one embodiment of the present disclosure provides amanufacturing method of an array substrate, including: providing a basesubstrate; forming a film to be patterned on the base substrate; andpatterning the film by using the film patterning method according to anyone of the abovementioned embodiments.

At least one embodiment of the present disclosure provides an arraysubstrate, manufactured by the abovementioned manufacturing method ofthe array substrate.

For example, in some examples, a surface of the film included in thearray substrate has a film pattern has a same planar shape as the secondregion.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to clearly illustrate the technical solution of embodiments ofthe present disclosure, the drawings of the embodiments will be brieflydescribed in the following, it is obvious that the drawings in thedescription are only related to some embodiments of the presentdisclosure and not limited to the present disclosure.

FIG. 1 is a schematic flowchart of a film patterning method provided byan embodiment of the present disclosure;

FIGS. 2A-2D are schematic diagrams of manufacturing processes of thefilm patterning method illustrated by FIG. 1;

FIG. 3A is a partial plan view of a film provided by an example of anembodiment of the present disclosure;

FIG. 3B is a partial plan view of a film provided by another example ofan embodiment of the present disclosure; and

FIG. 4 is a flowchart of a manufacturing method of an array substrateprovided by an embodiment of the present disclosure.

DETAILED DESCRIPTION

In order to make objects, technical details and advantages of theembodiments of the disclosure apparent, the technical solutions of theembodiments will be described in a clearly and fully understandable wayin connection with the drawings related to the embodiments of thedisclosure. Apparently, the described embodiments are just a part butnot all of the embodiments of the disclosure. Based on the describedembodiments herein, those skilled in the art can obtain otherembodiment(s), without any inventive work, which should be within thescope of the disclosure.

Unless otherwise defined, all the technical and scientific terms usedherein have the same meanings as commonly understood by one of ordinaryskill in the art to which the present disclosure belongs. The terms“first,” “second,” etc., which are used in the present disclosure, arenot intended to indicate any sequence, amount or importance, butdistinguish various components. Also, the terms “comprise,”“comprising,” “include,” “including,” etc., are intended to specify thatthe elements or the objects stated before these terms encompass theelements or the objects and equivalents thereof listed after theseterms, but do not preclude the other elements or objects. “On,” “under,”“right,” “left” and the like are only used to indicate relative positionrelationship, and when the position of the object which is described ischanged, the relative position relationship may be changed accordingly.

In study, the inventor(s) of the present application notices that: in amanufacturing method of an array substrate, the requirement on thecritical dimension (DICD) to develop an opening with a small size inphotoresist mask is very high. Exposure equipment used to manufacturethe opening with a small size in the photoresist mask generally haslimit precision. A normal mask method cannot meet the requirements in acase of preparing an opening with a size smaller than the limitprecision, and purchase of an exposure equipment with higher precisionand manufacture of a mask with higher precision will largely increasethe manufacturing costs.

Embodiments of the present disclosure provide a film patterning method,an array substrate and a manufacturing method thereof. The filmpatterning method includes: applying photoresist on a film to bepatterned; performing exposure and development on the photoresist, aregion corresponding to a completely removed portion of the photoresistafter the exposure and the development being a first region; post-bakingthe photoresist, so that the photoresist is melted and collapsed at ahigh temperature to change the region corresponding to the completelyremoved portion into a second region, and the photoresist afterpost-baking forms into a mask pattern; and patterning the film by usingthe mask pattern as a mask. The film patterning method utilizescharacteristics of a hot-melt photoresist that melts and collapses at ahigh temperature after the development and the post-baking, to provide apossibility to form a pattern with a size smaller than the limitprecision of an exposure equipment on a film to be patterned. Thepatterning method is simple in process, and has low costs.

Hereinafter, the film patterning method, the array substrate, and themanufacturing method thereof provided by the embodiments of the presentdisclosure are described with reference to the accompanying drawings.

An embodiment of the present disclosure provides a film patterningmethod. FIG. 1 is a schematic flowchart of a film patterning methodprovided by an embodiment of the present disclosure; FIGS. 2A-2D areschematic diagrams of manufacturing processes of the film patterningmethod illustrated by FIG. 1. As illustrated by FIG. 1 and FIGS. 2A-2D,the steps and manufacturing processes of the film patterning methodprovided by an embodiment of the present disclosure include:

S101: applying photoresist on a film to be patterned.

For example, as illustrated by FIG. 2A, a film 110 to be patterned canbe formed on a base substrate 100 by a method such as deposition ormagnetron sputtering. FIG. 2A is a schematic diagram, for example, thefilm may not be disposed on the base substrate.

For example, the base substrate 100 may be made of one or more materialsselected from the group consisting of glass, polyimide, polycarbonate,polyacrylate, polyetherimide, polyethersulfone, polyethyleneterephthalate, and polyethylene naphthalate. The present embodimentincludes but is not limited thereto.

For example, the film 110 may be an insulating layer. For example, thefilm 110 may be a gate insulating layer, an interlayer insulating layer,a passivation layer, or an etch barrier layer, and the like, which isnot limited in the present embodiment.

For example, the film 110 may include an inorganic material such as anoxide, a sulfide, or a nitride, which is not limited in the presentembodiment.

For example, the oxide may include calcium oxide, zinc oxide, copperoxide, titanium dioxide, tin dioxide, etc.; the sulfide may include ironsulfide, copper sulfide, zinc sulfide, tin disulfide, sulfur dioxide,etc.; and the nitride may include silicon nitride, aluminum nitride orthe like. The present embodiment includes but is not limited thereto.

For example, the film 110 may also be selected as an organic material,for example, the organic material may be one or a combination of onesselected from the group consisting of polyimide, polyamide,polycarbonate, and epoxy resin. The present embodiment is not limitedthereto.

For example, the film 110 may also be a metal layer. For example, amaterial of the film 110 may be one or more materials selected from thegroup consisting of aluminum, silver, molybdenum, titanium, platinum,gold, and chromium, which is not limited in the present embodiment. Thefilm 110 can also be other films.

For example, as illustrated by FIG. 2A, applying the photoresist on thefilm 110 to be patterned includes: applying a thin, uniform, anddefect-free photoresist layer 120 on the film 110 by a spin coatingmethod. The present embodiment is not limited thereto, and other coatingmethods may also be employed.

For example, a coating temperature of the photoresist is generally thesame as a room temperature to minimize a temperature fluctuation of thephotoresist, thereby reducing a process fluctuation.

S102: performing exposure and development on the photoresist, a regioncorresponding to a completely removed portion of the photoresist afterthe exposure and the development being a first region.

For example, a mask (not shown) is covered on the photoresist layer 120,and the photoresist layer 120 covered with the mask is exposed.

For example, the photoresist layer 120 may be irradiated with anelectron beam, an ion beam, an X-ray, an ultraviolet ray, or the like.The present embodiment is not limited thereto. For example, theultraviolet ray may be an ordinary ultraviolet ray having a wavelengthin a range of 200 nm to 400 nm, or may be an extreme ultraviolet rayhaving a wavelength in a range of 10 nm to 14 nm. The present embodimentis not limited thereto.

The present embodiment is described by taking a case where thephotoresist layer 120 is exposed by using an ultraviolet ray as anexample. For example, an illumination intensity used in the exposure ofthe photoresist layer 120 is 10 J/cm³-500 J/cm³.

For example, the illumination intensity used in the exposure of thephotoresist layer 120 may be 50 J/cm³-80 J/cm³, so as to sufficientlyexpose the photoresist layer 120, but the present embodiment is notlimited thereto.

For example, the illumination intensity used in the exposure of thephotoresist layer 120 may be 80 J/cm³-200 J/cm³, 250 J/cm³-500 J/cm³ or10 J/cm³-40 J/cm³, etc. The illumination intensity in the practicalprocess can be determined according to the thickness of the photoresistlayer 120.

For example, the photoresist includes a resin, a photosensitizer, asolvent, and an additive agent. Before the exposure, the photoresistlayer 120 is required to be pre-baked, such that the solvent in thephotoresist layer 120 can be sufficiently evaporated to dry thephotoresist layer 120, enhance the adhesion between the photoresistlayer 120 and a surface of the film 110, and improve the line resolutionafter the exposure. Generally, a temperature of the pre-baking may beset to about 90° C.-120° C. The present embodiment is not limitedthereto, but the temperature of the pre-baking cannot be too high toprevent the photoresist layer 120 from melting and collapsing at a hightemperature. Therefore, the temperature of the pre-backing in thepresent embodiment is not greater than 140° C. The pre-baked photoresistlayer 120 can be more strongly bonded to the film 110 after thepre-baking.

For example, positive photoresist can be pre-baked in air, whilenegative photoresist needs to be pre-baked in a nitrogen atmosphere.

For example, the photoresist included in the photoresist layer 120provided by the present embodiment is positive photoresist, and thepositive photoresist includes, for example, a novolac. Upon nodissolution inhibitor being present, the novolac is dissolved in thedeveloper; the photosensitizer in the positive photoresist includes aphoto active compound (PAC). For example, the photo active compound mayinclude diazonaphthoquinone (DNQ) or the like, which is not limited inthe present embodiment. Before the exposure, diazonaphthoquinone is astrong dissolution inhibitor that reduces the dissolution rate of theresin.

For example, in an ultraviolet exposure process, the photo activecompound such as diazonaphthoquinone is chemically decomposed in thepositive photoresist by a photochemical reaction, to cut therelationship between a main chain and a dependent chain of the resinpolymer, so as to achieve a purpose of weakening the polymer. Such thatthe photo active compound can become a solubility enhancer.Diazonaphthoquinone will produce a carboxylic acid in the exposurereaction, and the solubility of the carboxylic acid in the developer ishigh, so that the solubility of the exposed photoresist is increased inthe subsequent development process, and solubility rate of the positivephotoresist after the exposure is almost 10 times that of the unexposedphotoresist. Therefore, after the positive photoresist layer 120 isexposed, the positive photoresist layer 120 in an exposed region iscompletely removed to form a blank region (a first region 121), and thephotoresist layer 120 in an unexposed region remains on the film 110 asa subsequent protective film, and a pattern replicated onto a surface ofthe film 110 is the same as a pattern on a mask located above thephotoresist layer 120.

For example, upon the time for development being insufficient, thephotoresist layer 120 in the exposed region is unable to be completelydissolved during the development; upon the development time being toolong, the photoresist layer 120 in the unexposed region may be dissolvedfrom an edge of the pattern during the development, such that the edgeof the pattern is deteriorated. Therefore, the time for developing thephotoresist layer 120 in the present embodiment may be 10 s-500 s, andthe present embodiment includes but is not limited thereto.

For example, the developer provided in the present embodiment may be amedium alkali solution. For example, the developer may include one ormore materials selected from the group consisting of potassiumhydroxide, tetramethylammonium hydroxide, ketone and acetazolamide,which is not limited in the present embodiment.

For example, as illustrated by FIG. 2B, a region corresponding to aportion of the photoresist layer 120 that is completely removed afterthe exposure and the development is a first region 121, the first region121 is the blank region which is left after the positive photoresistlayer 120 in the exposed region being dissolved and removed by adeveloper.

For example, as illustrated by FIG. 2B, a minimum size of the firstregion 121 in a direction parallel to a plane where the film 110 islocated is a first size L1. It should be noted that, the presentembodiment is described by taking a case where the minimum size L1 of aplanar pattern of the first region 121 is the minimum size L1 of acontact surface of the first region 121 and the film 110 as an example.

For example, the first size L1 is not less than 3 μm. It should be notedthat, the first size L1 cannot be too large, generally, the first sizeL1 is in the micrometer range. For example, the first size L1 may be 6μm-10 μm, and the present embodiment includes but is not limitedthereto.

For example, a shape of an orthographic projection of a plane of thefirst region 121 having the first size L1 on the film 110 may include atleast one selected from the group consisting of a circle and a line.That is, a planar pattern of the first region 121 may include at leastone selected from the group consisting of a circle and a line. Thepresent embodiment includes but is not limited thereto.

S103: post-baking the photoresist, so that the photoresist is melted andcollapsed at a high temperature to change the region corresponding tothe completely removed portion into a second region, and the photoresistafter the post-baking forms into a mask pattern.

In the present embodiment, the photoresist coated on the film to bepatterned is a hot-melt photoresist, and the heat-resistant compositionin the hot-melt photoresist is less than that of an ordinaryphotoresist, so that the photoresist melts and collapses at a hightemperature in a case of post-baking, without affecting the performanceof the photoresist.

For example, as illustrated by FIGS. 2B and 2C, the photoresist layer120 having the first region 121 is post-baked, and the post-bakingprocess is performed at a temperature of 150° C.-300° C., to cause thephotoresist layer 120 to melt and collapse at a high temperature; thatis to say, the photoresist layer 120 around the first region 121 meltsand collapses during the post-baking process, such that a side of thephotoresist layer 120 being in contact with the film 110 is gatheredtowards the first region 121, and a side of the photoresist layer 120away from the film 120 melts and collapses. Therefore, the photoresistlayer 120 around the first region 121 flows into the first region 121after melting and collapsing at the high temperature, so as to changethe region corresponding to the completely removed portion of thephotoresist into a second region 122.

For example, the photoresist layer 120 having the first region 121 ispost-baked, and the post-baking process may be performed at atemperature of 150° C.-200° C., or may be 250° C.-300° C., etc. Thepresent embodiment is not limited herein.

For example, as illustrated by FIG. 2C, a minimum size of the secondregion 122 in a direction parallel to the plane where the film 110 islocated is a second size L2, that is, a minimum size of a side of thesecond region 122 being in contact with the film 110 is the second sizeL2, and the second size L2 is smaller than the first size L1.

For example, as illustrated by FIG. 2C, the second size L2 of the secondregion 122 is 1 μm-2.9 μm, which is smaller than the first size L1 ofthe first region 121 shown in FIG. 2B.

For example, the second size 122 of the second region 122 may be 1μm-2.5 μm, or may be 1.5 μm-2 μm, which is not limited in the presentembodiment.

For example, a shape of the plane of the second region 122 having thesecond size L2 may include at least one selected from the groupconsisting of a circle and a line; that is, a planar shape of the secondregion 122 may include at least one selected from the group consistingof a circle and a line. It should be noted that, the circle may be anapproximately circular shape, and for example, the shape of the plane ofthe second region 122 having the second size L2 may also be an ellipseor the like.

For example, as illustrated by FIG. 2C, a thickness of the photoresistlayer 120 in a direction perpendicular to the film 110, that is, in theX direction is 0.5 μm-10 μm.

For example, the thickness of the photoresist layer 120 in the directionperpendicular to the film 110 may be 1.5 μm-2.2 μm, so that partialphotoresist of the photoresist layer 120 around the first region 121collapses and flows into the first region 121, and the second region 122having a desired second size L2 is formed.

For example, the thickness of the photoresist layer 120 in the Xdirection may be 3 μm-5 μm, or the thickness of the photoresist layer120 in the X direction may also be 7 μm-10 μm, which is not limited inthe present embodiment.

For example, the time for post-baking the photoresist layer 120 in thepresent embodiment is 10 s-500 s.

For example, the photoresist layer 120 is post-baked for 10 s-50 s tocause the photoresist layer 120 around the first region 121 to melt andcollapse to form the second region 122 having the desired second sizeL2.

For example, the time for post-baking the photoresist layer 120 in thepresent embodiment may be 100 s-200 s or 300 s-500 s, which is notlimited in the present embodiment.

For example, an example of the present embodiment is described by takinga case where the film 110 is patterned to form an opening pattern as anexample. In the present embodiment, the exposure equipment used forexposing the photoresist layer 120 before forming a pattern having anaperture size of 1 μm-2.9 μm on the film 110 generally has a limitprecision of 3 μm, and the partial steps of forming the photoresistlayer 120 having the second region 122 include: using a mask platehaving an aperture size of 5 μm as a mask of a photoresist layer 120with a thickness of 0.5 μm-10 μm (for example, the thickness may be 1.5μm-2.2 μm); performing exposure to the photoresist layer 120, and lightintensity during the exposure being 10 J/cm³-500 J/cm³, for example, thelight intensity during the exposure may be 50 J/cm³-80 J/cm³; afterexposure, performing development on the photoresist layer 120, and thetime for development being selected from 10 s to 500 s; performingpost-baking to the developed photoresist layer 120, and a temperatureduring the post-backing process being selected from 150° C. to 300° C.,and the time for the post-baking time being selected from 10 s to 500 s,for example, the time for post-baking is 10 s-50 s. After theabovementioned exposure, development, and post-baking, the second region122 having the second size L2 of 1 μm-2.9 μm is formed on thephotoresist layer 120. Therefore, the film patterning method utilizesthe characteristics of a hot-melt photoresist that melts and collapsesat a high temperature after development and post-baking, to provide apossibility to form a pattern with a size smaller than the limitprecision of an exposure equipment on a film to be patterned. Thepatterning method is simple in process, and has low costs.

S104: patterning the film by using the mask pattern as a mask.

For example, as illustrated by FIG. 2D, the film 110 is patterned byusing the photoresist layer 120 having the second region 122 as a maskto form a small-sized pattern 111/112.

For example, the film 110 can be patterned to form an opening 111 havingthe second size L2, that is, a pore size of the opening 111 is 1 μm-2.9μm, and the embodiment includes but is not limited thereto.

For example, the film 110 can also be patterned to form a line shape 112having a minimum size of the second size L2, that is, a size of a shortedge of the line shape 112 (a length of an edge extending in the Ydirection) is 1 μm-2.9 μm, and the present embodiment includes but isnot limited thereto. It should be noted that, FIGS. 2A-2D schematicallyillustrate the formation of the small-sized pattern 111/112, but thepresent embodiment is not limited thereto, and a plurality ofsmall-sized patterns 111/112 can be formed.

For example, FIG. 3A is a partial plan view of a film provided by anexample of an embodiment of the present disclosure, and FIG. 3B is apartial plan view of a film provided by another example of an embodimentof the present disclosure. As illustrated by FIG. 3A, the pattern formedon the film 110 by using the mask pattern having the second region 122as a mask is an opening 111.

For example, a planar shape of the opening 111 in the YZ plane may be astandard circular shape or an approximately circular shape, and theembodiment includes but is not limited thereto.

For example, the planar shape of the opening 111 in the YZ plane mayalso be an irregular shape or the like. It should be noted that, FIG. 3Aschematically shows one opening 111. The embodiment is not limitedthereto, and a plurality of openings 111 can be formed.

For example, upon the film 110 being a gate insulating layer and/or aninterlayer insulating layer, the photoresist layer 120 having the secondregion 122, i.e., the mask pattern, can be utilized as a mask to form acontact hole (i.e., the opening 111) for connecting a source electrodeand a drain electrode with an active layer of a thin film transistor.Herein, the thin film transistor is a top gate type.

For example, upon the film 110 being an etch barrier layer, thephotoresist layer 120 having the second region 122 can be utilized as amask to form a contact hole (i.e., the opening 111) for connecting asource electrode and a drain electrode with an active layer of a thinfilm transistor.

For example, upon the film 110 being a passivation layer, thephotoresist layer 120 having the second region 122 can be utilized as amask to form a via hole (i.e., the opening 111) for exposing a drainelectrode of a thin film transistor and a common electrode line, and theexposed drain electrode can be electrically connected with asubsequently formed pixel electrode through the via hole, the exposedcommon electrode line can be electrically connected with a subsequentlyformed common electrode through the via hole, and the present embodimentincludes but is not limited thereto.

For example, the film 110 may also be other insulating layers or metallayers, etc., which is not limited in the present embodiment.

For example, as illustrated by FIG. 3B, the planar pattern formed on thefilm 110 by using the photoresist layer 120 having the second region 122as a mask may also have a line shape 112, that is, a groove or the likecan be formed in the film 110. It should be noted that, FIG. 3Bschematically shows one line shape 112. The present embodiment is notlimited thereto, and a plurality of line shapes 112 can be formed.

An embodiment of the present disclosure provides a manufacturing methodof an array substrate. FIG. 4 is a schematic flowchart of amanufacturing method of an array substrate according to an embodiment ofthe present disclosure. As illustrated by FIG. 4, the manufacturingmethod includes:

S201: providing a base substrate.

For example, the base substrate may be made of one or more materialsselected from the group consisting of glass, polyimide, polycarbonate,polyacrylate, polyetherimide, polyethersulfone, polyethyleneterephthalate, and polyethylene naphthalate. The embodiment includes butis not limited thereto.

S202: forming a film to be patterned on the base substrate.

For example, the film to be patterned may be formed on the basesubstrate by a method such as deposition or magnetron sputtering.

For example, the film may be an insulating layer. For example, the filmmay be a gate insulating layer, an interlayer insulating layer, apassivation layer or an etch barrier layer, and the like, which is notlimited in the present embodiment.

For example, the film may include an inorganic material, such as a metaloxide, a metal sulfide, or a metal nitride, which is not limited in thepresent embodiment.

For example, the film may also be an organic material, and the organicmaterial may include, for example, one or a combination of ones selectedfrom the group consisting of polyimide, polyamide, polycarbonate, andepoxy resin, and the present embodiment is not limited thereto.

For example, the film may also be a metal layer. For example, thematerial of the film may be one or more materials selected from thegroup consisting of aluminum, silver, molybdenum, titanium, platinum,gold, and chromium. The present embodiment is not limited thereto, forexample, the film can be other films.

S203: patterning the film by a film patterning method.

In the present embodiment, the film is patterned by using any filmpatterning method provided by the abovementioned embodiments, and thespecific patterning processes and the parameters such as the shape andthe size of the small-sized pattern obtained by patterning the film willnot be repeated herein.

The manufacturing method of an array substrate utilizes thecharacteristics of a hot-melt photoresist that melts and collapses at ahigh temperature after development and post-baking, to provide apossibility to form a pattern with a size smaller than the limitprecision of an exposure equipment on a film to be patterned. Thepatterning method is simple in process, and has low costs.

An embodiment of the present disclosure provides an array substrate, andthe array substrate is manufactured by the manufacturing method of thearray substrate provided by the abovementioned embodiments.

For example, a surface of a film included in the array substrateincludes a film pattern having the substantially same shape with aplanar shape of the second region of the photoresist layer, and aminimum size of the film pattern in a direction parallel to the planewhere the film is located is a second size, i.e., a minimum size of thesecond region in the direction parallel to the plane where the film islocated.

For example, the minimum size of the film pattern in the directionparallel to the plane where the film is located is 1 μm-2.9 μm.

For example, the minimum size of the film pattern in the directionparallel to the plane where the film is located may be 1 μm-2.5 μm, ormay also be 1.5 μm-2 μm, which is not limited in the present embodiment.

For example, the array substrate can be applied to a display device suchas a liquid crystal display device, an organic light emitting diode(OLED) display device, and any products or components having a displayfunction and including the display device, such as a television, adigital camera, a mobile phone, a watch, a tablet, a notebook computer,and a navigator. The present embodiment is not limited thereto.

The following points should to be explained:

(1) Unless otherwise defined, in the embodiments and accompanyingdrawings in the present disclosure, the same reference numeralrepresents the same meaning.

(2) The accompanying drawings involve only the structure(s) inconnection with the embodiment(s) of the present disclosure, and otherstructure(s) can be referred to common design(s).

(3) For the purpose of clarity, in accompanying drawings forillustrating the embodiment(s) of the present disclosure, layer(s) orregion(s) may be enlarged. However, it should understood that, in thecase in which a component or element such as a layer, film, region,substrate or the like is referred to be “on” or “under” anothercomponent or element, it may be directly on or under the anothercomponent or element or a component or element is interposedtherebetween.

The foregoing is only the embodiments of the present disclosure and notintended to limit the scope of protection of the present disclosure,alternations or replacements which can be easily envisaged by anyskilled person being familiar with the present technical field shallfall into the protection scope of the present disclosure. Thus, theprotection scope of the present disclosure should be based on theprotection scope of the claims.

What is claimed is:
 1. A film patterning method, comprising: applyingphotoresist on a film to be patterned; performing exposure anddevelopment on the photoresist, a region corresponding to a completelyremoved portion of the photoresist after the exposure and thedevelopment being a first region; post-baking the photoresist, so thatthe photoresist is melted and collapsed to change the regioncorresponding to the completely removed portion into a second region,the second region exposing the film, wherein the photoresist, after thepost-baking, forms into a mask pattern; and patterning the film by usingthe mask pattern as a mask, wherein a size of the first region in adirection parallel to a plane where the film is located is a first size,a size of the second region in the direction parallel to the plane wherethe film is located is a second size, the second size is smaller thanthe first size, and a planar shape of the first region and the secondregion comprises at least one selected from the group consisting of acircle and a line.
 2. The film patterning method according to claim 1,wherein the photoresist is positive photoresist.
 3. The film patterningmethod according to claim 1, wherein, during the post-baking, thepost-baking has a temperature of 150° C.-300° C. to cause thephotoresist to melt and collapse.
 4. The film patterning methodaccording to claim 3, wherein, during the post-baking, a time for thepost-baking is 10 s-500 s.
 5. The film patterning method according toclaim 4, wherein, during the post-baking, the time for the post-bakingis 10 s-50 s.
 6. The film patterning method according to claim 1,wherein, upon the planar shape of the second region being the circle,the second size is a pore size of the circle, and the second size is 1μm-2.9 μm; upon the planar shape of the second region being the line,the second size is a size of a short edge of the line, and the secondsize is 1 μm-2.9 μm.
 7. The film patterning method according to claim 6,wherein, upon the planar shape of the first region being the circle, thefirst size is a pore size of the circle, and the first size is not lessthan 3 μm; upon the planar shape of the first region being the line, thefirst size is a size of a short edge of the line, and the first size isnot less than 3 μm.
 8. The film patterning method according to claim 1,wherein the photoresist has a thickness of 0.5 μm-10 μm in a directionperpendicular to the film.
 9. The film patterning method according toclaim 8, wherein the thickness of the photoresist is 1.5 μm-2.2 μm inthe direction perpendicular to the film.
 10. The film patterning methodaccording to claim 1, wherein a light intensity used in the exposure is10 J/cm³-500 J/cm³.
 11. A manufacturing method of an array substrate,comprising: providing a base substrate; forming a film to be patternedon the base substrate; and patterning the film by using the filmpatterning method according to claim
 1. 12. An array substrate,manufactured by the manufacturing method of the array substrateaccording to claim
 11. 13. The array substrate according to claim 12,wherein a surface of the film included in the array substrate has a filmpattern having a same planar shape as the second region.